Title :
50 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics
Author :
Bach, H.-G. ; Schlaak, W. ; Mekonnen, G.G. ; Steingruber, R. ; Seeger, A. ; Engel, Th. ; Passenberg, W. ; Umbach, A. ; Schramm, C. ; Unterborsch, G.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
An InP-based photoreceiver OEIC for ⩾40 Gbit/s data rate applications is presented. Besides a waveguide-integrated photodiode it contains a 38 GHz gain flattened distributed amplifier, which is composed of four HEMTs, fabricated by e-beam lithography
Keywords :
HEMT integrated circuits; III-V semiconductors; electron beam lithography; indium compounds; integrated circuit technology; integrated optoelectronics; optical fabrication; optical receivers; photodiodes; 50 Gbit/s; Gbit/s InP-based photoreceiver OEIC; HEMT IC; HEMTs; InP; InP-based photoreceiver OEIC; bit/s data rate applications; e-beam lithography; gain flattened distributed amplifier; gain flattened transfer characteristics; waveguide-integrated photodiode; Bandwidth; Circuits; Distributed amplifiers; HEMTs; MODFETs; Optical amplifiers; Optical receivers; Optical waveguides; Optoelectronic devices; Stimulated emission;
Conference_Titel :
Optical Communication, 1998. 24th European Conference on
Conference_Location :
Madrid
Print_ISBN :
84-89900-14-0
DOI :
10.1109/ECOC.1998.732433
