• DocumentCode
    3311097
  • Title

    Effective figure of merit increase at the large temperature drops

  • Author

    Yurchenko, Vladimir B.

  • Author_Institution
    Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
  • fYear
    1996
  • fDate
    26-29 March 1996
  • Firstpage
    194
  • Lastpage
    196
  • Abstract
    Optimum configuration, assembling and commutation of the cells in a thermoelectric device have been investigated taking into account the temperature dependence of resistivity, thermal conductivity and Seebeck coefficient of the material operating at the large temperature drop. A solution is proposed which enables one to increase the effective figure of merit of the device as compared to the mean value of Z measured at the same temperature drop in a single wafer thermoelectric cell.
  • Keywords
    Seebeck effect; electrical resistivity; thermoelectric devices; IrSb/sub 3/; Seebeck coefficient; assembling; commutation; effective figure of merit; large temperature drops; optimum configuration; skutterudite materials; temperature dependence of resistivity; thermal conductivity; thermoelectric device cells; Assembly; Conducting materials; Magneto electrical resistivity imaging technique; Resistance heating; Semiconductor materials; Temperature dependence; Thermal conductivity; Thermoelectric devices; Thermoelectricity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1996., Fifteenth International Conference on
  • Conference_Location
    Pasadena, CA, USA
  • Print_ISBN
    0-7803-3221-0
  • Type

    conf

  • DOI
    10.1109/ICT.1996.553293
  • Filename
    553293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3311097