Title :
Effective figure of merit increase at the large temperature drops
Author :
Yurchenko, Vladimir B.
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
Abstract :
Optimum configuration, assembling and commutation of the cells in a thermoelectric device have been investigated taking into account the temperature dependence of resistivity, thermal conductivity and Seebeck coefficient of the material operating at the large temperature drop. A solution is proposed which enables one to increase the effective figure of merit of the device as compared to the mean value of Z measured at the same temperature drop in a single wafer thermoelectric cell.
Keywords :
Seebeck effect; electrical resistivity; thermoelectric devices; IrSb/sub 3/; Seebeck coefficient; assembling; commutation; effective figure of merit; large temperature drops; optimum configuration; skutterudite materials; temperature dependence of resistivity; thermal conductivity; thermoelectric device cells; Assembly; Conducting materials; Magneto electrical resistivity imaging technique; Resistance heating; Semiconductor materials; Temperature dependence; Thermal conductivity; Thermoelectric devices; Thermoelectricity; Voltage;
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
DOI :
10.1109/ICT.1996.553293
