High power ridge-waveguide 1.02 μm laser diodes with window structure

Author

Kawasaki, K. ; Kubota, M. ; Kuze, Y. ; Yamamura, S. ; Shigihara, K. ; Nagal, Y. ; Miyashita, M. ; Takemoto, A. ; Higuchi, H.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

1

fYear

1998

fDate

20-24 Sep 1998

Firstpage

241

Abstract

We report on a COD (catastrophic optical damage) free 1.02 μm laser diode with a window structure, which is formed by a quantum-well intermixing technique using Si ion implantation. Thermally-limited maximum power of 450 mW and kink free power over 200 mW are realized. Stable operation is obtained over 5000 hours under the condition of 50 centigrade, 150 mW

Keywords

ion implantation; laser stability; laser transitions; life testing; optical testing; semiconductor device testing; semiconductor lasers; 1.02 mum; 150 mW; 200 mW; 450 mW; 50 C; 5000 h; COD; Si ion implantation; catastrophic optical damage free 1.02 μm laser diode; high power ridge-waveguide 1.02 μm laser diodes; kink free power; quantum-well intermixing technique; stable operation; thermally-limited maximum power; window structure; Aging; Diode lasers; Ion implantation; Light sources; Optical fiber amplifiers; Optical films; Optical pumping; Power generation; Quantum well lasers; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1998. 24th European Conference on

Conference_Location

Madrid

Print_ISBN

84-89900-14-0

Type

conf

DOI

10.1109/ECOC.1998.732522

Filename

732522