Title :
Thermoelectric figure of merit of bounded semiconductors
Author :
Logvinov, G.N. ; Zakordonets, V.S.
Author_Institution :
Inst. of Thermoelectr., Ukrainian Acad. of Sci., Chernivtsy, Ukraine
Abstract :
The thermoelectric figure of merit is investigated, taking bulk and surface parameters into account. The electron and phonon temperatures are supposed to be different. It is shown that the thermoelectric figure of merit increases as sample dimensions decrease when the electron subsystem has an isotropic heat contact with the thermostat and the phonon subsystem has an adiabatical one.
Keywords :
electron-phonon interactions; semiconductor materials; thermoelectricity; bounded semiconductors; bulk parameters; electron subsystem; electron temperature; isotropic heat contact; phonon subsystem; phonon temperature; sample dimensions; surface parameters; thermoelectric figure of merit; thermostat; Contact resistance; Electrons; Magneto electrical resistivity imaging technique; Phonons; Surface resistance; Temperature; Thermal conductivity; Thermal resistance; Thermoelectricity; Thermostats;
Conference_Titel :
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location :
Pasadena, CA, USA
Print_ISBN :
0-7803-3221-0
DOI :
10.1109/ICT.1996.553295
