Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

This paper describes the next generation 1200 V trench-gate FS-IGBT chip technologies based on the concepts of the "low noise" and "low power dissipation". The novel design of the IGBT surface structure has been able to realize 36% reduction of the turn-on power dissipation when compared to the conventional IGBTs under the operating condition to set the same FWD reverse recovery dv/dt. Furthermore, the trade-off relationship between the on-state voltage and the turn-off power dissipation has been improved about 20% without the turn-off oscillation even in the extreme condition.