DocumentCode :
3312161
Title :
Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss
Author :
Onozawa, Y.
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
13
Lastpage :
16
Abstract :
This paper describes the next generation 1200 V trench-gate FS-IGBT chip technologies based on the concepts of the "low noise" and "low power dissipation". The novel design of the IGBT surface structure has been able to realize 36% reduction of the turn-on power dissipation when compared to the conventional IGBTs under the operating condition to set the same FWD reverse recovery dv/dt. Furthermore, the trade-off relationship between the on-state voltage and the turn-off power dissipation has been improved about 20% without the turn-off oscillation even in the extreme condition.
Keywords :
electromagnetic interference; insulated gate bipolar transistors; power semiconductor switches; power transistors; EMI noise; FWD reverse recovery; low noise concepts; low power dissipation concepts; switching loss; trench-gate FS-IGBT; turn-off power dissipation; turn-on power dissipation; voltage 1200 V; Controllability; Electric variables; Electromagnetic interference; Insulated gate bipolar transistors; Noise generators; Noise reduction; Power dissipation; Semiconductor device noise; Switching loss; Voltage; EMI noise; FWD reverse recovery dv/dt; Floating P-base layer; Turn-off oscillation; Turn-on di/dt controllability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
Type :
conf
DOI :
10.1109/ISPSD.2007.4294920
Filename :
4294920
Link To Document :
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