Title :
Optoelectronic up-converter to millimetre-wave band using a heterojunction bipolar phototransistor
Author :
Gonzalez, C. ; Thuret, J. ; Benchimol, J.L. ; Riet, M.
Author_Institution :
CNET, Bagneux, France
Abstract :
InP-InGaAs three-terminal heterojunction bipolar phototransistor (HPT) is reported as an optoelectronic mixer for up-converter operation. Taking advantage of the inherent non-linearities of the HPT, a remote optical signal modulated at lower frequency is up-converted to the 30 GHz band. The up-converted signal exhibits a conversion loss and a power level of 8.8 dB and -37.6 dBm, respectively
Keywords :
III-V semiconductors; bipolar transistors; electro-optical modulation; gallium arsenide; indium compounds; microwave photonics; optical communication equipment; optical frequency conversion; phototransistors; InP-InGaAs; InP-InGaAs three-terminal heterojunction bipolar phototransistor; conversion loss; heterojunction bipolar phototransistor; inherent non-linearities; optoelectronic mixer; optoelectronic up-converter to millimetre-wave band; power level; remote optical signal modulation; up-converted signal; up-converter operation; Frequency; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Nonlinear optics; Optical mixing; Optical modulation; Optical sensors; Phototransistors;
Conference_Titel :
Optical Communication, 1998. 24th European Conference on
Conference_Location :
Madrid
Print_ISBN :
84-89900-14-0
DOI :
10.1109/ECOC.1998.732647
