Optoelectronic up-converter to millimetre-wave band using a heterojunction bipolar phototransistor

Author

Gonzalez, C. ; Thuret, J. ; Benchimol, J.L. ; Riet, M.

Author_Institution

CNET, Bagneux, France

Volume

1

fYear

1998

fDate

20-24 Sep 1998

Firstpage

443

Abstract

InP-InGaAs three-terminal heterojunction bipolar phototransistor (HPT) is reported as an optoelectronic mixer for up-converter operation. Taking advantage of the inherent non-linearities of the HPT, a remote optical signal modulated at lower frequency is up-converted to the 30 GHz band. The up-converted signal exhibits a conversion loss and a power level of 8.8 dB and -37.6 dBm, respectively

Keywords

III-V semiconductors; bipolar transistors; electro-optical modulation; gallium arsenide; indium compounds; microwave photonics; optical communication equipment; optical frequency conversion; phototransistors; InP-InGaAs; InP-InGaAs three-terminal heterojunction bipolar phototransistor; conversion loss; heterojunction bipolar phototransistor; inherent non-linearities; optoelectronic mixer; optoelectronic up-converter to millimetre-wave band; power level; remote optical signal modulation; up-converted signal; up-converter operation; Frequency; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Nonlinear optics; Optical mixing; Optical modulation; Optical sensors; Phototransistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1998. 24th European Conference on

Conference_Location

Madrid

Print_ISBN

84-89900-14-0

Type

conf

DOI

10.1109/ECOC.1998.732647

Filename

732647