Title :
Depth-Resolved Temperature Measurements on Power Devices under Transient Conditions
Author :
Perpiñà, X. ; Jordà, X. ; Vellvehi, M. ; Mermet-Guyennet, M. ; Millán, J. ; Mestres, N.
Author_Institution :
Centre Nacional de Microelectron. (CNM-CSIC), Bellaterra
Abstract :
This paper shows a temperature optical probing technique based on transmission Fabry-Perot interferometry. Their feasibility is demonstrated with a specifically designed thermal test chip device and by also using another well-known thermometry method. Finally, the temperature within the drift region of a PT-IGBT is directly measured during its on- and off-state.
Keywords :
Fabry-Perot interferometers; insulated gate bipolar transistors; interferometry; thermometers; PT-IGBT; depth-resolved temperature measurements; drift region; power devices; temperature optical probing technique; thermal test chip device; thermometry method; transient conditions; transmission Fabry-Perot interferometry; Fabry-Perot; Optical films; Optical interferometry; Optical reflection; Power electronics; Power measurement; Power semiconductor devices; Refractive index; Solids; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294925
