DocumentCode :
3312308
Title :
Low Parasitic Current `Half ON´ Operation of Battery Protection IC
Author :
Matsunaga, S. ; Sawada, M. ; Sugimoto, M. ; Fujishima, N.
Author_Institution :
Fuji Electr. Adv. Technol. Ltd., Nagano
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
49
Lastpage :
52
Abstract :
Parasitic diode is frequently employed in integrated power devices, and causes parasitic leakage current. Large leakage current may cause troubles, such as latch up, malfunction of analogue circuit and increase in consumption power. In a single chip Li-ion battery protection IC, new operation method to charge a battery without using the parasitic diode is devised. To detect current direction precisely, only half of the bi-directional switches are turned on. We call it ´half on´ operation. This operation suppresses parasitic current and heat generation. The parasitic current is reduced from a few milli-amperes to a few nano- amperes. Chip temperature during charging can be lowered from 190 to 65 degrees Celsius.
Keywords :
battery management systems; field effect transistor switches; leakage currents; lithium; secondary cells; Li; Li - Element; bidirectional switches; integrated power devices; parasitic diode; parasitic leakage current; single chip Li-ion battery protection IC; Batteries; Bidirectional control; Costs; Electrons; Leakage current; MOSFETs; Protection; Semiconductor diodes; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
Type :
conf
DOI :
10.1109/ISPSD.2007.4294929
Filename :
4294929
Link To Document :
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