DocumentCode
3312406
Title
Anomalous temperature behavior in LDMOS current sensing
Author
Lin, J. ; Pendharkar, S. ; Hower, P. ; Arch, J. ; Chatterjee, T. ; Chen, K. ; Devore, J. ; Hu, B. ; Trogolo, J. ; Wang, Q.
Author_Institution
Texas Instrum. Inc., Manchester
fYear
2007
fDate
27-31 May 2007
Firstpage
65
Lastpage
68
Abstract
A peculiar temperature mismatch between a power LDMOS and its sense FET develops over time resulting in yield losses. The anomaly is traced to trapped charge in the power LDMOS that arises from a seemingly unrelated change in the hydrogen anneal temperature in the back end. The physical mechanism leading to the anomaly and the interaction between temperature mismatch and metal layout are presented.
Keywords
electric current measurement; electric sensing devices; power MOSFET; FET; LDMOS current sensing; anomalous temperature behavior; hydrogen anneal temperature; metal layout; temperature mismatch; Annealing; Circuit synthesis; FETs; Hydrogen; Instruments; Intelligent sensors; Power integrated circuits; Power semiconductor devices; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294933
Filename
4294933
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