Title :
8 kV Normally-off All-SiC Cascode Power Switch Using VJFETs
Author :
Stewart, E.J. ; McCoy, M.J. ; McNutt, T.R. ; Heame, H.C. ; Walker, A.P. ; Van Campen, S.D. ; Bates, G.M. ; Leslie, S. ; DeSalvo, G.C. ; Clarke, R.C.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Linthicum
Abstract :
We demonstrate an 8 kV, 3 A cascode power switch using SiC VJFETs for both the normally-on and normally-off devices. The normally-on SiC VJFETs have blocking voltages greater than 8 kV at VGS =-50 V pinch-off voltage and on-state currents of more than 4 A at VGS=0 V. The normally-off SiC VJFETs block 70 V (VGS=0 V) and can drive >2 A/device with positive gate voltage (VGS=2.5 V). The VJFETs were combined into a module to create the 8 kV all-SiC cascode switch that blocks 8 kV normally-off and drives 3 A of on-state current. Preliminary switching measurements show very fast rise and fall times.
Keywords :
field effect transistor switches; power semiconductor switches; silicon compounds; SiC cascode power switch; VJFET; blocking voltages; current 3 A; pinch-off voltage; positive gate voltage; voltage 50 V; voltage 8 kV; Diodes; Etching; FETs; Fabrication; Implants; Power semiconductor devices; Power semiconductor switches; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294938