Title :
The caracterization of the CdS-based solar cell heterojunctions
Author :
Potlog, T. ; Botnariuc, V. ; Gorceac, L. ; Spalatu, N. ; Maticiuc, N. ; Raievschi, S.
Author_Institution :
Dept. of Phys., Moldova State Univ., Chisinau, Moldova
Abstract :
The CdS-based solar cell heterojunctions (HJ) have been obtained by growth of CdS at relatively lower temperature using the close space sublimation method (CSS). Investigation of the photovoltaic characteristics shows an efficiency of about 12 % for InP/CdS and 9.6 % for CdS/CdTe solar cell HJ. The analysis of the forward dark current-voltage and the capacitance-voltage characteristics indicate a tunnelling recombination current which flows through states near or at the interfaces of a thermal energy of about 0.62 eV for CdS/CdTe and 0.42 eV for InP/CdS solar cell heterojunctions. The solar energy conversion efficiency is influenced by the interface states through the open circuit voltage and the fill factor.
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; indium compounds; semiconductor heterojunctions; solar cells; sublimation; wide band gap semiconductors; CdS-CdTe; InP-CdS; capacitance-voltage characteristics; close space sublimation; current-voltage characteristics; open circuit voltage; photovoltaic characteristics; solar cell heterojunctions; solar energy conversion; thermal energy; tunnelling recombination current; Heterojunctions; Indium phosphide; Interface states; Photovoltaic cells; Photovoltaic systems; capacitance-voltage and photovoltaic characteristics; dark forward-bias current; solar cell heterojunction;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650233
