Title :
lOkV 4H-SiC PiN Diodes Designed for Improved Switching Performance using Emitter Injection Control
Author :
Losee, P.A. ; Li, C. ; Wang, Y. ; Sharma, S.K. ; Chow, T.P. ; Bhat, I.B. ; Stahlbush, R.E. ; Gutmann, R.J.
Author_Institution :
Rensselaer Polytech. Inst., Troy
Abstract :
The switching versus forward conduction performance tradeoffs of 10 kV 4H-SiC PiN diodes are optimized using emitter injection control. Experimental results show superior switching performance with up to a 40% reduction in critical recovery parameters such as Qrr and JRP, while simulations indicate a better performance tradeoff than conventional PiN diodes in the presence of sufficiently long drift layer lifetime.
Keywords :
p-i-n diodes; silicon compounds; switching circuits; 4H-SiC PiN diodes; HSiC; SiC; critical recovery parameters; drift layer lifetime; emitter injection control; switching performance; Anodes; Charge carrier lifetime; Design optimization; Electric variables; Forward contracts; Laboratories; Numerical simulation; Power semiconductor devices; Power semiconductor switches; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294941
