Title : 
1200V Emcon4 freewheeling diode - a soft alternative
         
        
            Author : 
Hille, F. ; Bassler, M. ; Schulze, H. ; Falck, E. ; Felsl, H.P. ; Schieber, A. ; Mauder, A.
         
        
            Author_Institution : 
Infineon Technol. AG, Neubiberg
         
        
        
        
        
        
            Abstract : 
Freewheeling diodes are one of the major components for modern IGBT modules and have to satisfy a number of demands. Especially in hard switching applications, such as inverters for industrial drives or UPS, a soft switching behavior of the diode is - besides low losses and high ruggedness - of major interest. A high softness reduces EMI problems and enables a faster turn-on of the IGBT. In this work, a deep field stop concept is introduced into the next generation of Infineon\´s "Emcon" freewheeling diode, which yields a significant softness increase. The basic function of this field stop concept is illustrated by device simulations, and experimental results for the two realized device optimizations are presented.
         
        
            Keywords : 
electromagnetic interference; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; EMI; Emcon4 freewheeling diode; IGBT modules; soft switching behavior; voltage 1200 V; Anodes; Cathodes; Doping profiles; Insulated gate bipolar transistors; Inverters; Lithography; Platinum; Power semiconductor devices; Semiconductor diodes; Voltage;
         
        
        
        
            Conference_Titel : 
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
         
        
            Conference_Location : 
Jeju Island
         
        
            Print_ISBN : 
1-4244-1095-9
         
        
            Electronic_ISBN : 
1-4244-1096-7
         
        
        
            DOI : 
10.1109/ISPSD.2007.4294944