DocumentCode :
3312604
Title :
1200V Emcon4 freewheeling diode - a soft alternative
Author :
Hille, F. ; Bassler, M. ; Schulze, H. ; Falck, E. ; Felsl, H.P. ; Schieber, A. ; Mauder, A.
Author_Institution :
Infineon Technol. AG, Neubiberg
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
109
Lastpage :
112
Abstract :
Freewheeling diodes are one of the major components for modern IGBT modules and have to satisfy a number of demands. Especially in hard switching applications, such as inverters for industrial drives or UPS, a soft switching behavior of the diode is - besides low losses and high ruggedness - of major interest. A high softness reduces EMI problems and enables a faster turn-on of the IGBT. In this work, a deep field stop concept is introduced into the next generation of Infineon\´s "Emcon" freewheeling diode, which yields a significant softness increase. The basic function of this field stop concept is illustrated by device simulations, and experimental results for the two realized device optimizations are presented.
Keywords :
electromagnetic interference; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; EMI; Emcon4 freewheeling diode; IGBT modules; soft switching behavior; voltage 1200 V; Anodes; Cathodes; Doping profiles; Insulated gate bipolar transistors; Inverters; Lithography; Platinum; Power semiconductor devices; Semiconductor diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
Type :
conf
DOI :
10.1109/ISPSD.2007.4294944
Filename :
4294944
Link To Document :
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