• DocumentCode
    3312694
  • Title

    Analysis of Operational Degradation of SIC BJT Characteristics

  • Author

    Gao, Yan ; Huang, Alex Q. ; Zhang, Qingchun ; Krishnaswami, Sumi ; Agarwal, Anant K.

  • Author_Institution
    North Carolina State Univ., Raleigh
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    Degradation in both current gain and specific on-resistance of fabricated 4H-SiC BJTs have been observed after a short period of operation. In this paper, 1200 V BJTs were stressed and factors that cause the degradation are proposed. The degradation may be attributed to the increase of the surface states density along the SiC/SiO2 interface, which results in an increased surface recombination current and hence the degradation of the SiC BJT.
  • Keywords
    power bipolar transistors; silicon compounds; surface recombination; surface states; 4H-SiC; SiC BJT; SiC-SiO2; bipolar junction transistors; current gain; operational degradation; specific on-resistance; surface recombination current; surface states density; voltage 1200 V; Degradation; Doping; Power electronics; Power semiconductor devices; Radiative recombination; Silicon carbide; Stacking; Temperature; Voltage; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
  • Conference_Location
    Jeju Island
  • Print_ISBN
    1-4244-1095-9
  • Electronic_ISBN
    1-4244-1096-7
  • Type

    conf

  • DOI
    10.1109/ISPSD.2007.4294947
  • Filename
    4294947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3312694