DocumentCode
3312831
Title
A diode structure with anode side buried p doped layers for damping of dynamic avalanche
Author
Chen, Min ; Lutz, Josef ; Felsl, Hans Peter ; Schulze, Hans-Joachim
Author_Institution
Chemnitz Univ. of Technol., Chemnitz
fYear
2007
fDate
27-31 May 2007
Firstpage
141
Lastpage
144
Abstract
In this paper we present a novel 3.3 kV diode concept with anode side buried p doped layers. These p doped layers could retard the arising of the electric field and consequently postpone the onset of the dynamic avalanche at the pn-junction. Isothermal numerical simulation results suggested that this novel structure could permit balanced improvement of the static as well as the dynamic behaviors.
Keywords
avalanche diodes; damping; numerical analysis; power semiconductor diodes; anode side buried p doped layers; damping; diode structure; dynamic avalanche; electric field; high voltage freewheeling diode; isothermal numerical simulation; pn-junction; voltage 3.3 kV; Anodes; Charge carrier lifetime; Chemical technology; Damping; Doping profiles; Isothermal processes; Numerical simulation; Power semiconductor devices; Semiconductor diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294952
Filename
4294952
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