Influence of the base contact on the electrical characteristics of SiC BJTs

Author

Lee, Hyung-Seok ; Domeij, Martin ; Zetterling, Carl-Mikael ; Östling, Mikael ; Heinze, Birk ; Lutz, Josef

Author_Institution

KTH Royal Inst. of Technol., Kista-Stockholm

fYear

2007

fDate

27-31 May 2007

Firstpage

153

Lastpage

156

Abstract

In this paper, we have investigated how the specific on-resistance and common emitter current gain of SiC BJTs depend on the base contact resistance. The on-state characteristics of SiC BJTs were investigated before and after base contact annealing at different temperatures. The common emitter current gain and specific on-resistance was improved by 23% and 300% compared to the values of before base contact annealing, respectively. Large area SiC BJTs (active area 0.0324 cm²), have been measured up to 34 A collector current in pulsed mode showing a gain of 35, and a specific on-resistance of 8.79 mOmegaldrcm².

Keywords

bipolar transistors; contact resistance; silicon compounds; BJTs; SiC; SiC - Interface; base contact annealing; contact resistance; current 34 A; emitter current gain; on-state characteristics; Annealing; Chemical technology; Contact resistance; Electric variables; Electrical resistance measurement; MOSFETs; Pulse measurements; Silicon carbide; Temperature; Wet etching; bipolar junction transistor; contact resistance; current gain; silicon carbide; specific on-resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294955

Filename

4294955