Title :
Influence of the base contact on the electrical characteristics of SiC BJTs
Author :
Lee, Hyung-Seok ; Domeij, Martin ; Zetterling, Carl-Mikael ; Östling, Mikael ; Heinze, Birk ; Lutz, Josef
Author_Institution :
KTH Royal Inst. of Technol., Kista-Stockholm
Abstract :
In this paper, we have investigated how the specific on-resistance and common emitter current gain of SiC BJTs depend on the base contact resistance. The on-state characteristics of SiC BJTs were investigated before and after base contact annealing at different temperatures. The common emitter current gain and specific on-resistance was improved by 23% and 300% compared to the values of before base contact annealing, respectively. Large area SiC BJTs (active area 0.0324 cm2), have been measured up to 34 A collector current in pulsed mode showing a gain of 35, and a specific on-resistance of 8.79 mOmegaldrcm2.
Keywords :
bipolar transistors; contact resistance; silicon compounds; BJTs; SiC; SiC - Interface; base contact annealing; contact resistance; current 34 A; emitter current gain; on-state characteristics; Annealing; Chemical technology; Contact resistance; Electric variables; Electrical resistance measurement; MOSFETs; Pulse measurements; Silicon carbide; Temperature; Wet etching; bipolar junction transistor; contact resistance; current gain; silicon carbide; specific on-resistance;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294955
