DocumentCode
3312931
Title
Unified Approach in Electro-Thermal Modelling of IGBTs and Power PiN Diodes
Author
Jankovic, Nebojsa ; Ueta, Takashi ; Hamada, Kimimori ; Nishijima, Toshifumi ; Igic, Petar
Author_Institution
Univ. of Nis, Nis
fYear
2007
fDate
27-31 May 2007
Firstpage
165
Lastpage
168
Abstract
The unified electro-thermal modelling of the IGBT and power PiN diode based on modified minority carrier drift- diffusion (DD) theory is described in this paper. PiN and IGBT models are embedded in PSPICE commercial simulation software and successfully tested against commercially available power devices.
Keywords
insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; semiconductor device models; IGBT; PSPICE; electro-thermal modelling; minority carrier drift-diffusion theory; power PiN diodes; Analytical models; Computational modeling; Equations; Insulated gate bipolar transistors; Isothermal processes; Power engineering and energy; Power semiconductor devices; SPICE; Spontaneous emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294958
Filename
4294958
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