DocumentCode :
3312931
Title :
Unified Approach in Electro-Thermal Modelling of IGBTs and Power PiN Diodes
Author :
Jankovic, Nebojsa ; Ueta, Takashi ; Hamada, Kimimori ; Nishijima, Toshifumi ; Igic, Petar
Author_Institution :
Univ. of Nis, Nis
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
165
Lastpage :
168
Abstract :
The unified electro-thermal modelling of the IGBT and power PiN diode based on modified minority carrier drift- diffusion (DD) theory is described in this paper. PiN and IGBT models are embedded in PSPICE commercial simulation software and successfully tested against commercially available power devices.
Keywords :
insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; semiconductor device models; IGBT; PSPICE; electro-thermal modelling; minority carrier drift-diffusion theory; power PiN diodes; Analytical models; Computational modeling; Equations; Insulated gate bipolar transistors; Isothermal processes; Power engineering and energy; Power semiconductor devices; SPICE; Spontaneous emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
Type :
conf
DOI :
10.1109/ISPSD.2007.4294958
Filename :
4294958
Link To Document :
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