DocumentCode
331298
Title
Suppression of spectral hole burning and carrier transport effects in strain-compensated InGaAlAs-InGaAsP MQW lasers
Author
Matsui, Y. ; Murai, H. ; Suzuki, A. ; Ogawa, Y.
Author_Institution
Femtosecond Technol. Res. Assoc., Ibaraki, Japan
Volume
1
fYear
1998
fDate
20-24 Sep 1998
Firstpage
633
Abstract
Strain-compensated MQW lasers were investigated both theoretically and experimentally for high-speed operation. A large modulation bandwidth was obtained as a result of the large differential gain and suppression of carrier transport and SHB effects
Keywords
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; optical hole burning; optical transmitters; quantum well lasers; InGaAlAs-InGaAsP; SHB effects; carrier transport effect; high-speed operation; large differential gain; large modulation bandwidth; optical transmitters; spectral hole burning suppression; strain-compensated InGaAlAs-InGaAsP MQW lasers; Charge carrier density; Laser modes; Laser theory; Optical design; Quantum well devices; Semiconductor lasers; Tensile strain; Thermionic emission; Ultrafast optics; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1998. 24th European Conference on
Conference_Location
Madrid
Print_ISBN
84-89900-14-0
Type
conf
DOI
10.1109/ECOC.1998.732755
Filename
732755
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