DocumentCode
3313172
Title
A Multiple Deep Trench Isolation Structure with Voltage Divider Biasing
Author
Desoete, B. ; De Smet, A. ; Moens, P.
Author_Institution
AMI Semicond., Oudenaarde
fYear
2007
fDate
27-31 May 2007
Firstpage
213
Lastpage
216
Abstract
We present an isolation structure with multiple rings of deep trenches, which has proven to have an excellent latchup suppression capability. The regions between the trenches are contacted, allowing to increase the blocking voltage of the structure by applying an appropriate bias arrangement. A simple model to predict the optimal bias voltages is derived, and compared to TCAD simulations and measurements.
Keywords
isolation technology; power integrated circuits; voltage dividers; blocking voltage; latchup suppression capability; multiple deep trench isolation structure; smart power technology; voltage divider biasing; Ambient intelligence; Capacitance; Contacts; Isolation technology; Power semiconductor devices; Predictive models; Semiconductor device modeling; Silicon; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294970
Filename
4294970
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