DocumentCode
3313199
Title
Normally-off SiC-JFET inverter with low-voltage control and a high-speed drive circuit
Author
Ishikawa, Katusmi ; Onose, Hidekatsu ; Onose, Yasuo ; Ooyanagi, Takasumi ; Someya, Tomoyuki ; Yokoyama, Natsuki ; Hozouji, Hiroshi
Author_Institution
Hitachi Ltd., Ibaraki-ken
fYear
2007
fDate
27-31 May 2007
Firstpage
217
Lastpage
220
Abstract
A highly efficient inverter was achieved by using normally-off SiC-JFETs (silicon carbide junction FETs) as switching devices. A precise control system for the gate voltage and the high-speed driver circuit are quite important issues in the realization of an inverter system for operating JFETs with threshold voltage lower than 2V and for the reduction of switching loss. A two step push-pull circuit for precise control of the gate voltage and a speed-up capacitor circuit for high-speed operation are developed and high-speed switching of 600 V/2A SiC-JFET modules is demonstrated. The 50 W fan motor for an exterior unit of an air conditioner has been successfully operated by these SiC modules and developed driver circuits, and the the inverter efficiency was improved by about 6%, compared with conventional IGBT inverters.
Keywords
invertors; junction gate field effect transistors; power field effect transistors; silicon compounds; switching circuits; SiC; SiC - Interface; air conditioner; current 2 A; fan motor; gate voltage; high-speed drive circuit; low- voltage control; normally-off SiC-JFET inverter; power 50 W; silicon carbide junction FET; speed-up capacitor circuit; switching devices; voltage 600 V; Control systems; Driver circuits; Inverters; JFETs; Silicon carbide; Switched capacitor circuits; Switching circuits; Switching loss; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location
Jeju Island
Print_ISBN
1-4244-1095-9
Electronic_ISBN
1-4244-1096-7
Type
conf
DOI
10.1109/ISPSD.2007.4294971
Filename
4294971
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