DocumentCode
3313208
Title
Analytical modeling and ATLAS™ based simulation of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMGSGOI) MOSFETs
Author
Kumar, Mirgender ; Dubey, Sarvesh ; Tiwari, Pramod Kumar ; Jit, S.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fYear
2011
fDate
17-19 Dec. 2011
Firstpage
228
Lastpage
231
Abstract
An analytical study of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMG-SGOI) MOSFETs has been presented in this paper. It has been shown that DMG-SGOI structure alleviates the short-geometry problems like short-channel effects (SCEs), drain induced barrier lowering (DIBL) and hot-carrier effects (HCEs) more efficiently than strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFET structures.
Keywords
Ge-Si alloys; MOSFET; hot carriers; silicon-on-insulator; ATLAS™; MOSFET; analytical modeling; double material gate strained; drain induced barrier lowering; hot carrier effects; short channel effects; short geometry problems; silicon germanium on insulator; surface potential; Electric fields; Electric potential; Logic gates; MOSFETs; Silicon; Silicon germanium; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on
Conference_Location
Aligarh
Print_ISBN
978-1-4577-1105-3
Type
conf
DOI
10.1109/MSPCT.2011.6150481
Filename
6150481
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