Configuration of JI-LIGBT for Over 100 kHz Switching

Author

Terashima, Tomohide ; Moritani, Junichi

Author_Institution

Mitsubishi Electr. Corp., Fukuoka

fYear

2007

fDate

27-31 May 2007

Firstpage

225

Lastpage

228

Abstract

We have investigated into following measures to improve the switching performance of L-IGBT. 1. Passive PMOS. 2. N⁺ layer inside a p-type collector. 3. Wafer thinning. In particular, wafer thinning has brought remarkable improvement of switching performance on L-IGBT as the passive PMOS that we had proposed. Furthermore, we have fabricated a prototype IPD (intelligent power device) that we applied these measures, and a flyback converter controlled by the IPD has well demonstrated 150 kHz operation.

Keywords

MOSFET; insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; power semiconductor switches; JI-LIGBT; flyback converter control; frequency 150 kHz; intelligent power device; p-type collector; passive PMOS; switching performance; wafer thinning; Circuit simulation; DC-DC power converters; Degradation; Electric variables measurement; Power measurement; Power semiconductor devices; Power semiconductor switches; Prototypes; Semiconductor device measurement; Virtual colonoscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on

Conference_Location

Jeju Island

Print_ISBN

1-4244-1095-9

Electronic_ISBN

1-4244-1096-7

Type

conf

DOI

10.1109/ISPSD.2007.4294973

Filename

4294973