DocumentCode :
3313242
Title :
Enabling phase-change memory for data-centric computing: Technology, circuitand system
Author :
Jing Li
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin Madison, Madison, WI, USA
fYear :
2015
fDate :
24-27 May 2015
Firstpage :
21
Lastpage :
24
Abstract :
Emerging nonvolatile memory (NVM) technology i.e., phase-change memory (PCM) has been commonly employed as a drop-in replacement for either DRAM or Flash. However, the inherent nature of PCM technology does not align perfectly with either applications in terms of cost-per-bit, performance, power, endurance or retention. The missing killer applications for PCM have slowed down the technology development from becoming mainstream. From the systems perspective, the ever-growing big data problems call for a paradigm shift from traditional compute-centric system to data-centric system for better performance, efficiency and productivity. A data-centric system will demand new hardware features to support the efficient storage and manipulation of data in a wide range of data-intensive applications. Considering these factors, this paper will give an overview of recent research efforts to enable PCM for building a reliable and efficient ternary content addressable memory (TCAM). By leveraging multiple levels of computing stack - technology, circuit and architecture, we will show a holistic approach of tailoring PCM to meeting the new system requirements. It opens up opportunities of accelerating NVM development as the methodology can be generalized to other NVM technologies.
Keywords :
Big Data; computer centres; content-addressable storage; memory architecture; phase change memories; Big Data problems; NVM technology; PCM technology; TCAM; computing stack; cost-per-bit factor; data manipulation; data storage; data-centric computing; data-intensive applications; endurance factor; hardware features; nonvolatile memory technology; performance factor; phase-change memory; power factor; retention factor; ternary content addressable memory; Encoding; Hardware; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Reliability; Emerging Nonvolatile Memory; PCM; TCAM; Ternary Content Addressable Memory; data-centric system; near-/in-memory computing; phase change memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
Type :
conf
DOI :
10.1109/ISCAS.2015.7168560
Filename :
7168560
Link To Document :
بازگشت