Optimization of d-doped AlInAs/InGaAs HEMT performance using spacer layer and d-doping

Author

Aziz, Farhan ; Siddiqui, M.J.

Author_Institution

Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India

fYear

2011

fDate

17-19 Dec. 2011

Firstpage

236

Lastpage

239

Abstract

In this paper efforts have been made to optimize the performance of delta (δ) doped 0.5 μm gate length InP based In_0.53Ga_0.47As/In_0.52Al_0.48As high electron mobility transistor with the help of some parameters as δ-doping and spacer layer thickness variation. We perform characterization studies on high density two-dimensional electron gas (2DEG), conduction band discontinuity (ΔEC), threshold voltage (V_th), transconductance (g_m), cut-off frequency (f_T), confined in lattice-matched InP based d-doped In_0.53Ga_0.47As/In_0.52Al_0.48As quantum wells HEMT grown by molecular beam epitaxy (MBE) on InP substrate. The impact of parameters (δ doping and spacer layer) variation on the conduction band discontinuity, high density 2DEG and optimization of the performance of HEMT has been analysed. These values then utilize to optimize figure of merit such as transconductance and cut-off frequency of device.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor quantum wells; two-dimensional electron gas; AlInAs-InGaAs; HEMT; conduction band discontinuity; cut-off frequency; delta doping; figure of merit; high electron mobility transistors; molecular beam epitaxy; quantum wells; size 0.5 mum; spacer layer thickness variation; threshold voltage; two-dimensional electron gas; Doping; HEMTs; Indium gallium arsenide; Indium phosphide; Logic gates; Threshold voltage; 2DEG; Delta Doping; High Electron Mobility Transistor (HEMT); InAlAs/InGaAs Hetrostructure; Spacer Layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on

Conference_Location

Aligarh

Print_ISBN

978-1-4577-1105-3

Type

conf

DOI

10.1109/MSPCT.2011.6150483

Filename

6150483