Title :
Analysis of the MOSFET Failure In a Junction-Isolated Power Integrated Circuit
Author :
Jung, Jeesung ; Huang, Alex Q. ; Li, Xuening
Author_Institution :
North Carolina State Univ., Raleigh
Abstract :
This paper analyzes a possible MOSFET failure mechanism in a Junction-Isolated Power Integrated Circuit during the diode reverse recovery. We have found that this failure is caused by the abruptly increased power density in the center of the isolated device structure.
Keywords :
power MOSFET; power integrated circuits; semiconductor diodes; MOSFET failure; diode reverse recovery; isolated device structure; junction-isolated power integrated circuit; power density; Failure analysis; MOSFET circuits; Power MOSFET; Power integrated circuits; Power semiconductor devices; Power system reliability; Semiconductor diodes; Switches; USA Councils; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294979
