Title :
Monolithic High-Voltage GaN MOSFET/Schottky Pair with Reverse Blocking Capability
Author :
Huang, W. ; Chow, T.P.
Author_Institution :
Rensselaer Polytech. Inst., Troy
Abstract :
We report on a high voltage, reverse blocking GaN MOS-gated transistor switch which integrates a n-channel lateral GaN MOSFET with a Schottky diode. The device, with RESURF lengths up to 18 mum, exhibits good DC characteristics with forward and reverse blocking voltages as high as 770 V and 1050 V respectively.
Keywords :
Schottky diodes; gallium compounds; power MOSFET; GaN; GaN - Binary; RESURF; Schottky diode; monolithic high-voltage GaN MOSFET; power MOSFET; reverse blocking capability; size 18 mum; voltage 1050 V; voltage 770 V; Bidirectional control; Gallium nitride; HEMTs; MODFETs; MOSFET circuits; Power MOSFET; Rectifiers; Schottky diodes; Switches; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294983
