Title :
20V-400A SiC Zener Diodes with Excellent Temperature Coefficient
Author :
Ishii, R. ; Tsuchida, H. ; Nakayama, K. ; Sugawara, Y.
Author_Institution :
Central Res. Inst. of Electr. Power Ind., Yokosuka
Abstract :
This paper reports the achievement of 20 V-400 A 4H-SiC Zener diodes which have a high-doped pn junction with a large active area of 4 mm times 4 mm and MESA-JTE. The temperature coefficient of the breakdown voltage is as small as 5.7times10-5 1/K (positive) in the range from room temperature to 200degC. An extremely low dynamic resistance of 0.01 Omega is confirmed in dynamic operation. A large peak reverse current of 400 A is achieved, which corresponds to a high reverse current density of 2500 A/cm2 and an 8 kW pulse operation capability.
Keywords :
Zener diodes; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 4H-SiC; MESA-JTE; SiC; Zener diodes; breakdown voltage; current 400 A; extremely low dynamic resistance; high reverse current density; high-doped pn junction; large peak reverse current; temperature 20 C to 200 C; temperature coefficient; voltage 20 V; Circuits; Current density; Fabrication; Semiconductor diodes; Silicon carbide; Substrates; Temperature distribution; Thermal conductivity; Voltage; Zirconium;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294986
