High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N⁺ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm² diodes. The leakage current in the 25degC-300degC temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm² diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300degC.