Title :
Modeling and simulation of AlGaAs/GaAs SQW laser for optical communication system
Author :
Lal, Pyare ; Siddiqui, M.J. ; Alvi, P.A.
Author_Institution :
Dept. of Phys., Banasthali Univ., Vidyapith, India
Abstract :
This paper aims to report various lasing characteristics of AlGaAs/GaAs single quantum well laser for optical communication systems. Under modeling and mathematical simulation, we have calculated anti-guiding factor, gain compression, differential gain, peak material gain as a function of carrier density, and convolution optical gain of AlGaAs/GaAs SQW laser as function of wavelength and photonic energy. On behalf of calculations, we have shown that the modeled SQW laser has maximum optical gain at ~ 0.83 μm. The results obtained ensure the usefulness of the AlGaAs/GaAs SQW SCH laser in communication systems based on optical fiber.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; convolution; gallium arsenide; laser beams; optical communication equipment; quantum well lasers; AlGaAs-GaAs; SQW laser; antiguiding factor; carrier density; convolution optical gain; differential gain; gain compression; lasing characteristics; mathematical simulation; optical communication system; optical fiber; peak material gain; photonic energy; separate confinement-heterostructure quantum well; single quantum well laser; Charge carrier density; Gallium arsenide; Laser modes; Optical fibers; Optical signal processing; Photonics;
Conference_Titel :
Multimedia, Signal Processing and Communication Technologies (IMPACT), 2011 International Conference on
Conference_Location :
Aligarh
Print_ISBN :
978-1-4577-1105-3
DOI :
10.1109/MSPCT.2011.6150497
