Simulation-based comparison of CNT-FETs and G-FETs from a circuit designer´s perspective

This paper compares the performance achieved by carbon-based field-effect transistors made up of either carbon nanotubes or graphene, based on the SPICE models reported for the electrical simulation of these devices. The results achieved by these models are compared with silicon-based conventional CMOS devices, in terms of their main electrical (I_DS-vs-V_DS and I_DS-vs-V_GS) characteristics as well as their fundamental performance metrics, including the intrinsic voltage gain, A_v, transconductance efficiency, g_m/I_DS, and transit frequency, f_T. These figures of merit are obtained for diverse biasing and sizing conditions, and discussed from a circuit designer´s perspective, in order to determine the benefits and drawbacks of the materials and devices under study. As an application, some carbon-based basic analog and digital circuits are designed and compared with their CMOS counterparts, in order to highlight their potential advantages in each case¹.