DocumentCode :
3313936
Title :
A study of failure mechanisms in CMOS & BJT ICs and their effect on device reliability
Author :
Rajesh, M.G. ; Vinod, Gopika ; Das, Divya ; Bhatnagar, P.V. ; Pithawa, C.K. ; Thaduri, A. ; Verma, Anil Kumar
Author_Institution :
Electron. Div., BARC, Mumbai, India
fYear :
2010
fDate :
14-16 Dec. 2010
Firstpage :
425
Lastpage :
430
Abstract :
The reliability of electronic systems, used in nuclear power plants, is traditionally estimated with empirical databases such as MIL-HDBK-217, PRISM etc. These methods assign a constant failure rate to electronic devices, during their useful life. Currently, electronic reliability prediction is moving towards applying the Physics of Failure approach which considers information on process, technology, fabrication techniques, materials used, etc. The constant failure rate assumption stems from treating failures as random events. Electronics division of BARC is engaged in design & fabrication of CMOS and BJT ICs for nuclear pulse processing and signal conditioning. New microelectronic devices often exhibit infant mortality and wear-out phenomena while in operation. It points to competing degradation mechanisms-electro migration, hot carrier injection, dielectric breakdown etc. - that make a device´s useful life different from that predicted by empirical methods. Understanding the dominant mechanisms that lead to device failure - Physics of Failure - is a more realistic approach to reliability prediction. This paper describes common failure mechanisms- encountered in CMOS and BJT ICs and the efforts being taken to quantify these effects in an optical-isolator IC - 4N36 - which forms a part of the trip generation circuit in neutron flux monitoring systems.
Keywords :
CMOS integrated circuits; bipolar transistor circuits; design of experiments; failure analysis; semiconductor device reliability; BJT IC; CMOS; device reliability; electronic reliability prediction; failure mechanisms; neutron flux monitoring systems; nuclear pulse processing; signal conditioning; trip generation circuit; Aging; Couplers; Junctions; Lead; Monitoring; Reliability; Design of experiments; Failure Mechanism; Optocoupler; Physics of failure; Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability, Safety and Hazard (ICRESH), 2010 2nd International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-8344-0
Type :
conf
DOI :
10.1109/ICRESH.2010.5779587
Filename :
5779587
Link To Document :
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