Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

Author

Zhiyuan Zheng ; Zimin Chen ; Yingda Chen ; Hualong Wu ; Shanjin Huang ; Bingfeng Fan ; Zhisheng Wu ; Gang Wang ; Hao Jiang

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China

Volume

9

Issue

4

fYear

2013

fDate

Apr-13

Firstpage

260

Lastpage

265

Abstract

We report the observation of electroluminescence from the first to fourth quantum wells (QWs) from the p -GaN layer in InGaN/GaN multiple-QW light-emitting diodes (LEDs) with various indium contents (4%-16%) in each QW. The investigated LED sample showed a lower turn-on voltage and ideality factor as well as a reduction of etching pit density compared with the reference sample. Also, the X-ray reciprocal space maps revealed a partial strain relaxation in the active region. The enhanced hole injection efficiency was attributed to the weakening of strain-induced polarization field in the QWs and the good crystalline quality.

Keywords

III-V semiconductors; electroluminescence; etching; gallium compounds; light emitting diodes; quantum well devices; stress relaxation; wide band gap semiconductors; InGaN-GaN; X-ray reciprocal space map; active region; electroluminescence; enhanced hole injection; etching pit density reduction; good crystalline quality; ideality factor; low turn-on voltage; multiple quantum well light emitting diodes; nitride based light emitting diodes; partial strain relaxation; strain induced polarization field weakening; Electroluminescence; Gallium nitride; Light emitting diodes; Quantum well devices; Solid state lighting; Substrates; Crystalline quality; electroluminescence; hole injection; light-emitting diode (LED); polarization effect; quantum well;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2012.2225091

Filename

6423213