Title :
Gas flow patterns and thermal uniformity in rapid thermal processing equipment
Author :
Campbell, S.A. ; Knutson, K.L. ; Ahn, K.H. ; Leighton, J.D. ; Liu, B.
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
Abstract :
Two-dimensional simulation of a rapid thermal processing (RTP) reactor is used to determine the radiative heating and the radiative and convective cooling. The gas flow patterns are found to be a strong function of temperature. Edge losses dominate the wafer thermal nonuniformity at high temperature, while convective cooling dominates at low temperature. A peak in the stress is found under transient conditions. To validate the model, some of the results are compared to experimental data from a small custom RTP system.<>
Keywords :
convection; cooling; digital simulation; flow simulation; heat radiation; heat treatment; losses; modelling; semiconductor technology; thermal analysis; 2D simulation; RTP reactor; convective cooling; edge losses; gas flow patterns; high temperature; low temperature; model; radiative cooling; rapid thermal processing equipment; semiconductor processing; stress peak; thermal uniformity; transient conditions; wafer thermal nonuniformity; Cooling; Fluid flow; Heating; Inductors; Rapid thermal processing; Semiconductor device modeling; Temperature; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237012
