DocumentCode
3316023
Title
New topography expression model and 3D topography simulation of Al sputter deposition, etching, and photolithography
Author
Fujinaga, M. ; Kunikiyo, T. ; Uchida, T. ; Kotani, N. ; Osaki, A. ; Akasaka, Y.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
905
Lastpage
908
Abstract
It is shown that the material surface can be described by the constant concentration area (the contour surface), by using the continuity principle at the material surface and considering the essential property of the material surface. Based on this model and the conservation of mass, the authors present a simulation algorithm and develop a 3D topography simulator (3D MULSS: Three-Dimensional Multi Layer Shape Simulator). It is demonstrated that this simulator can simulate the coverage of Al sputter deposition accurately, by comparing simulations and experimental results. 3D MULSS can also simulate the sequential processes of deposition, etching, and photolithography in three dimensions. In addition, it is shown that the proposed model can be applied to the surface tension by the 2D simulation of reflow.<>
Keywords
aluminium; digital simulation; electronic engineering computing; etching; metallisation; photolithography; sputter deposition; surface topography; 2D reflow simulation; 3D MULSS; 3D multilayer shape simulator; 3D topography simulation; Al; constant concentration area; continuity principle; contour surface; etching; material surface; photolithography; simulation algorithm; sputter deposition; surface tension; topography expression model; Lithography; Semiconductor device modeling; Shape; Sputter etching; Sputtering; Surface tension; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237016
Filename
237016
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