NMOS-junction integration study with ultra-high temperature non-diffusive laser annealing for the 45 nm node and below

This paper demonstrates that, for NMOS, the use of LSA and smart junction engineering enable to improve dramatically short channel effects (-65% in DIBL at L_g=45 nm due to lower X_j and DL) and I_on/I_off performance (+7% I_on at I_off=100 nA/μm due to steeper sub-threshold slope and reduced poly-depletion) compared to spike annealed N-MOSFETs. These results show the potential advantage of ultra-high temperature and non diffusive annealing such as LSA that may be necessary for the 45 nm technology and below.