Study on the impact of Ge-implantation on the work function of fully silicided NiSi gate as ultra-shallow junction formed by using germanium preamorphization

Author

Cai, Yimao ; Xu, Chuan ; Shan, Xiaonan ; Huang, Ru ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2005

fDate

7-8 June 2005

Firstpage

23

Lastpage

26

Abstract

In this paper the impact of Ge-implantation on the work function of fully silicided NiSi gate is investigated. C-V measurement shows that work functions of NiSi gates with and without Ge implantation vary slightly, from 4.759 eV to 4.729 eV. The increase of interface state and fixed oxide charge introduced by Ge preamorphization implantation is not observed. These results demonstrate that fully silicided NiSi gate technology can be integrated with Ge preamorphization implantation in self alignment CMOS process.

Keywords

CMOS integrated circuits; MOS capacitors; germanium; interface states; ion implantation; nickel compounds; p-n junctions; semiconductor device measurement; work function; 4.759 to 4.729 eV; Ge-implantation; MOS capacitors; NiSi:Ge; capacitance-voltage measurement; germanium preamorphization; interface state; oxide charge; p-n junctions; self alignment CMOS process; silicided NiSi gate; ultra-shallow junction; work function; Capacitance-voltage characteristics; Data mining; Germanium; Implants; MOS capacitors; Microelectronics; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203869

Filename

1598655