Title :
Study on the impact of Ge-implantation on the work function of fully silicided NiSi gate as ultra-shallow junction formed by using germanium preamorphization
Author :
Cai, Yimao ; Xu, Chuan ; Shan, Xiaonan ; Huang, Ru ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper the impact of Ge-implantation on the work function of fully silicided NiSi gate is investigated. C-V measurement shows that work functions of NiSi gates with and without Ge implantation vary slightly, from 4.759 eV to 4.729 eV. The increase of interface state and fixed oxide charge introduced by Ge preamorphization implantation is not observed. These results demonstrate that fully silicided NiSi gate technology can be integrated with Ge preamorphization implantation in self alignment CMOS process.
Keywords :
CMOS integrated circuits; MOS capacitors; germanium; interface states; ion implantation; nickel compounds; p-n junctions; semiconductor device measurement; work function; 4.759 to 4.729 eV; Ge-implantation; MOS capacitors; NiSi:Ge; capacitance-voltage measurement; germanium preamorphization; interface state; oxide charge; p-n junctions; self alignment CMOS process; silicided NiSi gate; ultra-shallow junction; work function; Capacitance-voltage characteristics; Data mining; Germanium; Implants; MOS capacitors; Microelectronics; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicidation;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203869
