DocumentCode
3316086
Title
The Emission Gated Device Experiment
Author
Kodis, M.A. ; Vanderplaats, N.R. ; Zaidman, E.G.
Author_Institution
US Naval Res. Lab., Washington, DC, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
893
Lastpage
896
Abstract
The Emission Gated Device Experiment has been constructed to observe a prebunched electron beam in a traveling wave circuit. The objective of this study is to define the efficiency, bandwidth, and high-frequency performance of emission gated devices for potential applications in radar, electronic warfare, and neutral particle beam accelerators. With tight bunches injected into an undriven helix one wavelength long, an efficiency of 6% and a gain of 10 dB have been observed. Experimental results and simulations are compared with a view to understanding the dynamics of the bunched beam in the circuit fields. Tight bunching and high average current are shown to be the strongest contributors to high efficiency; therefore, a practical device requires a very high gain input circuit.<>
Keywords
digital simulation; electrodynamics; electron beams; electron-wave tubes; ultra-high-frequency tubes; 10 dB; 6 percent; Emission Gated Device Experiment; UHF; bandwidth; bunched beam dynamics; circuit fields; density modulated tubes; efficiency; high-frequency performance; prebunched electron beam; simulations; traveling wave circuit; undriven; Bandwidth; Circuit simulation; Electron accelerators; Electron beams; Electronic warfare; Gain; Particle accelerators; Particle beams; Radar applications;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237019
Filename
237019
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