• DocumentCode
    3316086
  • Title

    The Emission Gated Device Experiment

  • Author

    Kodis, M.A. ; Vanderplaats, N.R. ; Zaidman, E.G.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    893
  • Lastpage
    896
  • Abstract
    The Emission Gated Device Experiment has been constructed to observe a prebunched electron beam in a traveling wave circuit. The objective of this study is to define the efficiency, bandwidth, and high-frequency performance of emission gated devices for potential applications in radar, electronic warfare, and neutral particle beam accelerators. With tight bunches injected into an undriven helix one wavelength long, an efficiency of 6% and a gain of 10 dB have been observed. Experimental results and simulations are compared with a view to understanding the dynamics of the bunched beam in the circuit fields. Tight bunching and high average current are shown to be the strongest contributors to high efficiency; therefore, a practical device requires a very high gain input circuit.<>
  • Keywords
    digital simulation; electrodynamics; electron beams; electron-wave tubes; ultra-high-frequency tubes; 10 dB; 6 percent; Emission Gated Device Experiment; UHF; bandwidth; bunched beam dynamics; circuit fields; density modulated tubes; efficiency; high-frequency performance; prebunched electron beam; simulations; traveling wave circuit; undriven; Bandwidth; Circuit simulation; Electron accelerators; Electron beams; Electronic warfare; Gain; Particle accelerators; Particle beams; Radar applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237019
  • Filename
    237019