N+/p ultra-shallow junction with low energy bismuth ion-implantation at low temperature

In this study, we achieved n⁺/p ultra-shallow junction with low energy Bi ion-implantation at low temperature RTA and solid phase epitaxial regrowth (SPER) and investigated its structural and electrical characteristics. The shallow junctions (∼15 nm) at low temperature annealing (600°C) and complete crystallization without defects are achieved. More importantly, junctions at low implant temperature fabricated at this low thermal budget can be adequate and tailored for source, drain extensions for high-K dielectric and metal-electrode MOSFET device applications.