• DocumentCode
    3316198
  • Title

    Anomalous doping profile in heavily doped Ge

  • Author

    Hosawa, K. ; Matsumoto, K. ; Shibahara, K.

  • Author_Institution
    Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
  • fYear
    2005
  • fDate
    7-8 June 2005
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    In this paper, the As and Sb dopant profiles in Ge introduced by ion implantation was evaluated. Profiles for medium dose implantation without amorphizing did not have severe discrepancy between simulated profiles. High dose implantation gave rise to unexpected deep penetration of the dopant. This probably originates from oxidation of the surface amorphized layer.
  • Keywords
    amorphisation; antimony; arsenic; doping profiles; elemental semiconductors; germanium; heavily doped semiconductors; ion implantation; oxidation; Ge:As; Ge:Sb; doping profile; heavily doped Ge; ion implantation; oxidation; surface amorphized layer; Atomic layer deposition; Doping profiles; Electron devices; Electronic mail; Fabrication; Insulation; Ion implantation; MOSFET circuits; Oxidation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
  • Print_ISBN
    4-9902158-6-9
  • Type

    conf

  • DOI
    10.1109/IWJT.2005.203875
  • Filename
    1598661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3316198