Title :
Two-dimensional device simulation for avalanche induced short channel effect in poly-Si TFT
Author :
Yamada, S. ; Yokoyama, S. ; Koyanagi, M.
Author_Institution :
Res. Center for Integrated Syst., Hiroshima Univ., Japan
Abstract :
A novel two-dimensional device simulator for poly-Si TFTs (thin-film transistors) is developed, in which the effects of grain boundaries (GBs) are incorporated into the carrier mobility model. In this simulator, the basic semiconductor equations are iteratively solved in combination with the carrier generation/recombination model, which consists of avalanche, S-R-H, and Auger processes. By using this simulator, the effects of GBs on device characteristics are accurately evaluated. In addition, the avalanche-induced short channel effect in poly-Si TFTs is numerically analyzed.<>
Keywords :
carrier mobility; electron-hole recombination; elemental semiconductors; grain boundaries; impact ionisation; semiconductor device models; silicon; thin film transistors; Auger processes; Schottky Read Hall recombination; Si; avalanche induced short channel effect; carrier generation/recombination model; carrier mobility model; grain boundaries (GBs); numerical analysis; polysilicon TFT; thin-film transistors; two-dimensional device simulator; Equations; Grain boundaries; Radiative recombination; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237027
