Title :
Ultra shallow As profiling before and after spike annealing using medium energy ion scattering
Author :
Abo, Satoshi ; Ichihara, Satoshi ; Lohner, Tivadar ; Gyulai, Jozsef ; Wakaya, Fujio ; Takai, Mikio
Author_Institution :
Res. Center for Mater. Sci. at Extreme Conditions, Osaka Univ., Japan
Abstract :
Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8×1014 ions/cm2 before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.
Keywords :
annealing; arsenic; doping profiles; elemental semiconductors; ion-surface impact; silicon; 0.5 to 3 keV; MEIS spectra; Si:As; TEA; medium energy ion scattering spectra; spike annealing; toroidal electrostatic analyzer; ultra shallow arsenic profiles; Annealing; Atomic measurements; Doping profiles; Electrostatic analysis; Electrostatic measurements; Energy measurement; Energy resolution; Probes; Scattering; Ultra large scale integration;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203878
