Title :
A new a-Si TFT with Al/sub 2/O/sub 3//SiN double-layered gate insulator for 10.4-inch diagonal multicolor display
Author :
Yamamoto, Hiroshi ; Matsumaru, H. ; Shirahashi, K. ; Nakatani, M. ; Sasano, A. ; Konishi, N. ; Tsutsui, K. ; Tsukada, T.
Author_Institution :
Hitachi Ltd., Chiba, Japan
Abstract :
A novel a-Si TFT (thin film transistor) with an Al gate electrode and an Al/sub 2/O/sub 3//SiN double-layered gate insulator has been developed and successfully applied to a 10.4-in diagonal multicolor display panel. Al is a low resistivity metal and it is also possible to form Al/sub 2/O/sub 3/ by anodic oxidation. These features contribute greatly to decreasing the number of defects in the panel and are indispensable for manufacturing a large-size display. The Al, which is used as a gate electrode, can also be used as a gate bus-line metal. As a result, the gate bus-line resistance of the panel can be reduced to about 2 k Omega , which is quite effective for improving the image quality of the panel.<>
Keywords :
alumina; aluminium; amorphous semiconductors; elemental semiconductors; flat panel displays; liquid crystal displays; silicon; silicon compounds; thin film transistors; 10.4 in; 2 kohm; LCD; Si-SiN-Al/sub 2/O/sub 3/-Al; TFT; anodic oxidation; double-layered gate insulator; gate bus-line metal; gate bus-line resistance; gate electrode; image quality; large-size display; multicolor display panel; thin film transistor; Conductivity; Displays; Electrodes; Image quality; Insulation; Manufacturing; Oxidation; Silicon compounds; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237029
