DocumentCode
3316268
Title
Benefits of heat-assist for laser annealing
Author
Shibahara, K.
Author_Institution
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
fYear
2005
fDate
7-8 June 2005
Firstpage
57
Lastpage
58
Abstract
In this paper, a new scheme for laser annealing named partial-melt laser annealing (PMLA) is proposed based on the knowledges obtained with heat-assisted laser annealing (HALA) investigation. Its feasibility for 10 nm junction was demonstrated. The obtained sheet resistance indicated sufficient dopant activation by this method.
Keywords
doping profiles; electrical resistivity; laser beam annealing; HALA; PMLA; dopant activation; heat-assist for laser annealing; junctions; partial-melt laser annealing; sheet resistance; Annealing; Heating; Lamps; MOSFET circuits; Proposals; Solid lasers; Substrates; Surface resistance; Tail; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN
4-9902158-6-9
Type
conf
DOI
10.1109/IWJT.2005.203880
Filename
1598666
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