Title :
Simulation of high-temperature millisecond annealing based on an atomistic modeling of boron diffusion in silicon
Author :
Hane, Masami ; Ikezawa, Takeo
Author_Institution :
Syst. Devices Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
In this paper, boron ion implantation and subsequent annealing processes in Si were modeled with two kinds of atomistic methods, i.e. molecular dynamics (MD) and Monte Carlo (MC) methods. Through the simulation study, high temperature millisecond annealing is proven to be promising technique, while the simulation results indicate that it still needs pre-/post thermal/amorphization processes being optimized for actual device manufacturing.
Keywords :
Monte Carlo methods; amorphisation; annealing; boron; diffusion; elemental semiconductors; ion implantation; molecular dynamics method; silicon; Monte Carlo methods; Si:B; atomistic modeling; boron diffusion; boron ion implantation; high-temperature millisecond annealing; molecular dynamics methods; post thermal amorphization processes; preamorphization processes; Boron; Ion implantation; Kinetic theory; Laboratories; MOSFET circuits; National electric code; Silicon; Simulated annealing; Temperature; Vehicles;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203881
