DocumentCode
3316277
Title
Active matrix liquid crystal display design using low and high temperature processed polysilicon TFTs
Author
Lewis, A.G. ; Wu, I.-W. ; Huang, T.Y. ; Chiang, A. ; Bruce, R.H.
Author_Institution
Xerox Palo Alto Res. Center, CA, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
11
Abstract
The authors compare polysilicon n- and p-channel thin-film transistors (TFTs) which have been fabricated using either a low-temperature (>
Keywords
CMOS integrated circuits; elemental semiconductors; flat panel displays; integrated circuit technology; liquid crystal displays; silicon; thin film transistors; CMOS designs; Si-SiO/sub 2/; active matrix LCD design; flat panel active matrix displays; high-temperature quartz-based technology; low temperature processing; n-channel TFTs; p-channel TFTs; peripheral circuits; polysilicon TFTs; thin-film transistors; Active matrix liquid crystal displays; Active matrix technology; CMOS technology; Circuits; Costs; Flat panel displays; Glass; Liquid crystal displays; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237031
Filename
237031
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