Title :
Minimization of pattern dependence by optimized flash lamp annealing
Author :
Ito, T. ; Matsuo, K. ; Itokawa, H. ; Itani, T. ; Tarnaoki, N. ; Honguh, Y. ; Suguro, K. ; Yokomori, T. ; Owada, T. ; Goto, Y. ; Nozaki, Y. ; Murayama, H. ; Kiyama, H. ; Kusuda, T.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
This paper presents the improvement of the flash lamp annealing (FLA) process to achieve the ultra-shallow junction (USJ) requirement for high-performance CMOSFETs. Issues concerning ultra-rapid activation are discussed; namely, crystal damage (residual defect, deformation and crack) and pattern dependence, We report that the FLA process with long pulse duration and cap layers can improve USJ characteristics for various design-scale cells.
Keywords :
CMOS integrated circuits; MOSFET; cracks; crystal defects; deformation; incoherent light annealing; FLA; USJ characteristics; crack; crystal damage; deformation; high-performance CMOSFET; optimized flash lamp annealing process; pattern dependence; residual defect; ultrashallow junction; Annealing; CMOS technology; CMOSFETs; Lamps; Leakage current; Manufacturing processes; Pulse measurements; Semiconductor device manufacture; Surface cracks; Temperature;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203882
