Self-aligned silicided inverse-T gate LDD devices for sub-half micron CMOS technology

Author

Chen, M.-L. ; Hillenius, S.J. ; Juengling, W. ; Yang, T.S. ; Kornblit, A. ; Lindenberger, W.S. ; Swiderski, J.A. ; Favreau, D.P.

Author_Institution

AT&T Bell Lab., Allentown, PA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

829

Lastpage

832

Abstract

A nitride-sealed L-shaped Si spacer technique is used to form inverse-T gate sub-half micron N- and P-LDD (lightly doped drain) device structures with self-aligned Ti silicided gate and source-drain. The advantage of the L-shaped Si spacer N-LDD devices over the L-shaped nitride spacer devices is to extend the gate electrode so that it fully overlaps the N/sup +/ S/D region, which provides (1) higher current drive due to a reduction of series resistance with an increased carrier concentration at the LDD region and (2) less degradation during hot carrier aging due to a reduction of maximum lateral electric field and greater tolerance to higher trapped charges.<>

Keywords

CMOS integrated circuits; hot carriers; insulated gate field effect transistors; integrated circuit technology; semiconductor device testing; I-V characteristics; Si-Si/sub 3/N/sub 4/; Si-SiO/sub 2/; carrier concentration; current drive; gate electrode; hot carrier aging; inverse-T gate LDD devices; maximum lateral electric field; nitride-sealed L-shaped Si spacer technique; self-aligned TiSi/sub 2/ gate; series resistance; source-drain; sub-half micron CMOS technology; Aging; Degradation; Electric resistance; Electrodes; Hot carriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237034

Filename

237034