Title :
Hydrogen effect on ultra-shallow arsenic n+/p junction formed by AsH3 plasma doping (PLAD)
Author :
Heo, Sungho ; Baek, Sungkweon ; Lee, Dongkyu ; Buh, Gyongho ; Sin, Yugyun ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwang-Ju Inst. of Sci. & Technol., South Korea
Abstract :
The electrical and structural characteristics of junction was affected during the activation annealing which was interpreted as a hydrogen effect. In this work, the hydrogen effect of arsenic n+/p ultra-shallow junction formed by AsH3 (arsine) plasma doping is reported. The additional hydrogen dopant retards the dopant activation due to the hydrogen damage effect confirmed by HR-XTEM analysis. The low temperature pre-annealing efficiently reduced residual defect. To obtain the high quality arsenic n+/p junction formed by plasma doping, an additional annealing method is needed to remove the hydrogen damage effect. To measure electrical characteristics such as the sheet resistance and activated carrier concentration of doped samples, hall measurement was done.
Keywords :
Hall effect; annealing; arsenic; carrier density; electrical resistivity; elemental semiconductors; hydrogen; p-n junctions; plasma materials processing; silicon; transmission electron microscopy; AsH3 plasma doping; HR-XTEM analysis; PLAD; Si:As,H; carrier concentration; electrical characteristic; hall measurement; hydrogen damage effect; hydrogen dopant activation; low temperature preannealing; residual defect; sheet resistance; ultra-shallow arsenic n+-p junction; Annealing; Ash; Doping; Electric variables; Electric variables measurement; Electrical resistance measurement; Hydrogen; Plasma measurements; Plasma properties; Plasma temperature;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203884
