Turn-on mechanism of 2500 V MOS assisted gate triggered thyristor (MAGT)

Author

Nakagawa, A. ; Yoshida, H. ; Kamei, Y.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

811

Lastpage

814

Abstract

2500-V MOS assisted gate triggered thyristors (MAGTs) have been proposed as promising devices for future pulsed power applications. It was successfully demonstrated that the device is able to form an extremely large current pulse of 110 kA/ mu s/cm/sup 2/ di/dt and 100 ns pulse width. Numerical simulations were carried out to investigate the switching-on mechanisms as well as the maximum switching speed. It would found that three operation modes are distinguishable in the turn-on transients and that the whole device area goes into thyristor action only 45 ns after MOS gate triggering. This is attributed to the fine-patterned small unit cell size and uniform MOS gate triggering. MAGTs also have a large current handling capability, exceeding 10 kA/cm/sup 2/, and thus have great potential as a direct replacement for conventional thyratrons.<>

Keywords

carrier density; metal-insulator-semiconductor devices; pulsed power technology; thyristors; transients; 2500 V; 45 ns; MOS assisted gate triggered thyristors; current handling capability; electron density distribution; hole density distribution; large current pulse; maximum switching speed; numerical simulation; operation modes; pulsed power applications; switching-on mechanisms; turn-on transients; uniform MOS gate triggering; Numerical simulation; Space vector pulse width modulation; Thyratrons; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237038

Filename

237038