Feasibility study of plasma doping on Si substrates with photo-resist patterns

Author

Aiba, Issui ; Sasaki, Yuichiro ; Okashita, Katsumi ; Tamura, Hideki ; Fukagawa, Yotaro ; Tsutsui, Kazuo ; Ito, Hiroyuki ; Kakushima, Kuniyuki ; Mizuno, Bunji ; Iwai, Hiroshi

Author_Institution

Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2005

fDate

7-8 June 2005

Firstpage

75

Lastpage

76

Abstract

Plasma doping is one of the candidates of the impurity doping processes to form shallow junction. Although the PD is a highly efficient doping process, it would be useful to establish a proper wet cleaning method that follows the PD processes so that the PD can be used in the conventional semiconductor fabrication flow. The effects of the photo-resist masks are examined in conjunction with the PD processes including the retained dose after the removal of the photo-resist using the ashing.

Keywords

elemental semiconductors; photoresists; plasma materials processing; semiconductor doping; silicon; surface cleaning; Si; ashing; impurity doping; photoresist masks; photoresist patterns; plasma doping; shallow junction; substrates; wet cleaning method; Boron; Cleaning; Collaboration; Plasma measurements; Resists; Scanning electron microscopy; Scanning probe microscopy; Semiconductor device doping; Semiconductor impurities; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203886

Filename

1598672